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| RFP4N05, RFP4N06 June 1999 File Number 2880.2 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. Features * 4A, 50V and 60V * rDS(ON) = 0.800 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information G PART NUMBER RFP4N05 RFP4N06 PACKAGE TO-220AB TO-220AB BRAND RFP4N05 RFP4N06 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-523 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP4N05, RFP4N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N05 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperat6ure for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg 50 50 4 10 20 25 0.2 -55 to 150 300 260 RFP4N06 60 60 4 10 20 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/ oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0 50 60 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) VGS = 20V, VDS = 0 ID = 4A, VGS = 10V, (Figures 6, 7) ID = 4A, VGS = 10V ID 1A, VDD = 30V, RGS = 50, RL = 29.2, VGS = 10V, (Figure 10) 2 6 14 16 14 4 1 25 100 0.800 3.2 15 30 30 25 200 85 30 5 V V V A A nA V ns ns ns ns pF pF pF oC/W Electrical Specifications PARAMETER MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP4N05 RFP4N06 Gate Threshold Voltage Zero Gate Voltage Drain Current Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: width 300s duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 1A ISD = 2A, dlSD/dt = 50A/s TEST CONDITIONS MIN TYP 100 MAX 1.4 UNITS V ns 4-524 RFP4N05, RFP4N06 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless Otherwise Specified 4.5 4.0 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 20V 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 8 6 4 2 0 0 1 2 3 4 5 VGS = 10V VGS = 9V VGS = 8V VGS = 7V VGS = 6V VGS = 5V 6 7 0.10 RFP4N05 RFP4N06 100 0.01 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 4 3 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 25oC 1.6 -40oC 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 125oC 125oC 2 25oC -40oC 1 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 0 1 2 3 ID, DRAIN CURRENT (A) 4 5 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 4-525 RFP4N05, RFP4N06 Typical Performance Curves 2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 4A, VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE 1.5 Unless Otherwise Specified (Continued) 2 VGS = VDS ID = 250A 1.5 1 1 0.5 0.5 0 -50 0 50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VDS, DRAIN TO SOURCE VOLTAGE (V) 200 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 60 VDD = BVDSS 45 GATE SOURCE VOLTAGE RL = 15 IG(REF) = 0.095mA VGS = 10V 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS VDD = BVDSS 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 160 C, CAPACITANCE (pF) 120 6 CISS 30 4 80 COSS 40 CRSS 0 15 DRAIN SOURCE VOLTAGE 2 0 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4-526 RFP4N05, RFP4N06 Test Circuits and Waveforms VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT 0.3F Qgs D VDS G DUT 0 Qg(TOT) Qgd VGS CURRENT REGULATOR 12V BATTERY 0.2F 50k IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-527 |
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